By Peter W. Hawkes (ed.)

This sequence covers a variety of themes, stretching from the particle optics of accelerators, mass spectrometers, electron and ion microscopes, and of person elements of those tools to theoretical and useful points of contemporary electroinics. one other huge intterest is electronic picture processing and development reputation, together with the units hired and the equipment built. Electron physics is interpreted very liberally and articles are usually incorporated on fabrics of present curiosity in addition to at the units that hire them. the item of the sequence is to supply articles that can evaluate a brand new or quickly constructing box, or may possibly hide a long time of analysis, therefore supplying a small monograph on a selected topic. "Advances in Electronics and Electron Physics" quantity 86 positive aspects articles at the following issues: GaAs semiconductor stories; snapshot processing; N-beam calculators; and electron optics.

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2 V the drain current increases. This increase is due to electrons flowing from gate to drain, and the I-V characteristic in this region is that of the reverse-biased gate-to-channel junction. If the transistor of Fig. 28 were used in a p n junction DRAM cell, the storage time would be reduced to a few hundred milliseconds at room temperature. Obviously, there is considerable motivation for minimizing this effect. 0 Gate Voltage (V) FIGURE29. Drain current vs. gate voltage for a 5 x 350pm ring-gate JFET.

D . Experimental Results 1. Eflect of Temperature Consider a large-area storage capacitor in which bulk generation dominates 24 JAMES A. COOPER, JR. 5 10’ t IT, FIGURE13 Capacitor voltage as a function of time for several values of applied voltage VA the capacitor dunng the charge removal transient. Note that at a specific time, say t/ro = voltage falls short of the applied voltage VAby the same amount, regardless of the value of VA. This “shortfall” is, of course, the diode voltage drop. Equation (54) suggests that the storage time will be thermally activated with an activation energy EAgreater than or equal to half the band-gap.

The drain current in the treated device is reduced by about three orders of magnitude compared to the untreated device. 3 eV. ) The reduction in gate-to-drain current in the treated devices is attributed to an increase in Schottky barrier height that results from an unpinning of the Fermi level (Carpenter, Melloch, and Dungan, 1988). The (NH,)2S layer is thought to passivate most of the surface states that otherwise would exist at the metal-semiconductor interface. Although (NH,),S-treated surfaces degrade within a few hours if exposed to air, the presence of the metal gate protects the (NH,),S layer in these MESFETs.

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